http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007001861-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c186e9ae8cafab5df5c8d80cfa7b0fa1 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B25-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-38 |
| filingDate | 2006-08-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_059871249fb9c02c631b4ad60ce3ecce http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_06bdc247272bf8871948fa94720009f4 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_584e28b75313e8a52525bfaadac2fe23 |
| publicationDate | 2007-01-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2007001861-A |
| titleOfInvention | Method for growing gallium nitride crystal |
| abstract | PROBLEM TO BE SOLVED: To provide a GaN single crystal substrate having a low dislocation density of 10 6 cm -2 or less. SOLUTION: The growth surface of vapor phase growth is not flat, but has a three-dimensional recessed facet structure in which facet surfaces are aggregated, and the facet structure is maintained until the end of growth while maintaining the facet structure until the end. Single crystal gallium nitride obtained by growing dislocations without embedding and gathering dislocations at the bottom of the facet to reduce dislocations other than the line region following the bottom of the facet. [Selection] Figure 9 |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012503340-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-7112379-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2008084612-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2020262132-A1 |
| priorityDate | 2006-08-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 25.