| abstract |
A novel copolymer suitable for making bilayer resist systems for deep UV, especially 193 and 248 nm photoimageable top layer coatings, high resolution photolithography. Chemically amplified photoresist compositions and binders for photoimageable etch resistant photoresist compositions suitable as materials for use in ArF and Krf photolithography using novel copolymers An organosilicon substructure suitable for use in a resin is provided. |