| Predicate |
Object |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823807
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0922 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-092
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-161
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-338
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8238
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0328
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-778
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-812 |
| filingDate |
2003-07-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2006-01-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2006501637-A |
| titleOfInvention |
Heterojunction field effect transistor using silicon-germanium alloy and silicon-carbon alloy |
| abstract |
A semiconductor device manufactured using a silicon-germanium buffer layer and a silicon-carbon channel layer structure, for example, a heterojunction field effect transistor. The present invention provides a strained silicon channel layer on top, for example, by forming a silicon-carbon alloy strained silicon channel layer containing less than about 1.5 atomic percent C substantially incorporated into the Si lattice of the alloy. A method is provided for reducing the through-defect density through a reduced germanium content in the SiGe relaxation buffer layer formed. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007527623-A |
| priorityDate |
2002-07-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |