| abstract |
Methods and apparatus are provided for annealing a material disposed in a processing chamber to form a silicide layer. In one aspect, placing a substrate with a silicon material on a substrate support in a chamber, forming a metal layer on at least the silicon material, annealing the substrate in situ, A method of treating a substrate surface comprising producing a metal silicide layer is provided. In another aspect, the method includes a load lock chamber and an intermediate substrate transfer region coupled to the load lock chamber, the intermediate substrate transfer region including a first substrate transfer chamber and a second substrate transfer chamber. , Executed in an apparatus comprising a physical vapor deposition processing chamber disposed in the first substrate transfer chamber and an annealing chamber disposed in the second substrate transfer chamber. |