http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2006352093-A
Outgoing Links
Predicate | Object |
---|---|
assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-05 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C13-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-28 |
filingDate | 2006-05-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7cc88e9715153176aeab58a7375b4cd5 |
publicationDate | 2006-12-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | JP-2006352093-A |
titleOfInvention | Semiconductor device |
abstract | An object of the present invention is to provide a non-volatile semiconductor device capable of additionally writing data other than at the time of manufacture and capable of preventing forgery by rewriting. Another object is to provide a highly reliable and inexpensive nonvolatile semiconductor device. A first conductive layer and a second conductive layer are provided, and one or both of the first conductive layer and the second conductive layer is provided between the first conductive layer and the second conductive layer. This is a semiconductor device having an organic compound layer that allows a first conductive layer and a second conductive layer to be in contact with each other when a potential is applied to generate a Coulomb force and the Coulomb force becomes a certain level or more. [Selection] Figure 2 |
isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2009094483-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8093586-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2008126449-A1 |
priorityDate | 2005-05-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 74.