http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2006351687-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_73ebc284a55d5daf0e209d6186c9e65c |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-822 |
| filingDate | 2005-06-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_000498e485ee4dac4daab7a3fd7a2e33 |
| publicationDate | 2006-12-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2006351687-A |
| titleOfInvention | Semiconductor device |
| abstract | PROBLEM TO BE SOLVED: To provide a semiconductor device capable of increasing an L value and a Q value without causing an increase in an area occupied by wiring. SOLUTION: A semiconductor substrate 10, a plurality of insulating layers 11, 12, 13 stacked on the semiconductor substrate 10, and a spiral shape provided on the semiconductor substrate 10 and on each insulating layer 11, 12, 13 are provided. A plurality of wiring layers 21, 22, 23, and 24 are provided, and at least one set of wiring layers arranged via one insulating layer is electrically connected. [Selection] Figure 1 |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2011021411-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8274352-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008193059-A |
| priorityDate | 2005-06-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 18.