http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2006349864-A
Outgoing Links
Predicate | Object |
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assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_be055db3c1a09879df07379ba969e223 |
classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08L2205-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S430-106 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0392 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-2041 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08L59-00 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-039 |
filingDate | 2005-06-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1af7dd77e44a3851934d7250b1f76bc7 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_49af5196b78d3c177aa575a266ca2370 |
publicationDate | 2006-12-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | JP-2006349864-A |
titleOfInvention | Chemically amplified resist material and pattern forming method using the same |
abstract | In immersion lithography, a decrease in solubility of a chemically amplified resist film is prevented, and a fine pattern having a good shape can be formed. A resist film made of a chemically amplified resist containing a polymer containing hemiacetal or hemiketal is formed on a substrate. Subsequently, pattern exposure is performed by selectively irradiating the resist film 102 with exposure light 105 in a state where the liquid 104 is disposed on the formed resist film 102. Thereafter, the resist film 102 subjected to pattern exposure is developed to obtain a resist pattern 102 a having a good pattern shape from the resist film 102. [Selection] Figure 1 |
priorityDate | 2005-06-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 53.