http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2006339398-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_294881271413951a95f284b588a68e66 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-423 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-49 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-092 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-417 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8238 |
| filingDate | 2005-06-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_436231aa0ff62a08e77eb40463b0f52e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_898d85197f9b69af941e5e30646cc892 |
| publicationDate | 2006-12-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2006339398-A |
| titleOfInvention | Manufacturing method of semiconductor device |
| abstract | 【Task】 To provide a method for manufacturing a semiconductor device in which the yield is improved by preventing the occurrence of contact failure, and a semiconductor device manufactured by the method. [Solution] Forming a first conductivity type field effect transistor and a second conductivity type field effect transistor on the same substrate; and forming a channel of the first conductivity type field effect transistor on the first conductivity type field effect transistor. A step of sequentially forming a first film for applying a first stress to the region and a first oxide film; and a second conductive type field effect transistor on the first oxide film and the second conductivity type field effect transistor; A step of forming a second film for applying a second stress to the channel region of the conductivity type field effect transistor, and a surface alteration treatment for altering the surface layer of the second film to form a second oxide film A semiconductor device is manufactured by a manufacturing method that includes a step of performing a predetermined patterning on the second film subjected to the surface layer alteration treatment. [Selection] Figure 10 |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007173466-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007158258-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-102420126-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-102446832-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-102610558-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-102097380-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-102610569-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-102623329-A |
| priorityDate | 2005-06-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 29.