http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2006331584-A

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filingDate 2005-05-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_58f1f1dc42063d885d8f42bf7b952590
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publicationDate 2006-12-07-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2006331584-A
titleOfInvention Semiconductor integrated circuit and microcomputer
abstract PROBLEM TO BE SOLVED: To provide a technique for preventing an element from being deteriorated or damaged due to power interruption. A memory unit (22) in which electrically rewritable nonvolatile memory cells are arranged in an array, and a high voltage generation circuit (23) capable of generating a high voltage supplied to the memory unit. And a semiconductor memory (FMRY). A power supply circuit (71) for generating a power supply voltage for operation of the semiconductor memory and a power supply from the power supply circuit to the semiconductor memory after the output voltage level of the high voltage generating circuit is lowered. Control circuit (70). By stopping the power supply from the power supply circuit to the semiconductor memory after the output voltage level of the high voltage generating circuit is lowered, the element is prevented from being deteriorated or damaged due to power interruption. . [Selection] Figure 1
priorityDate 2005-05-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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Total number of triples: 22.