| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_60e21de07fa18fc54e2150daffc14654 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-32 |
| filingDate |
2005-05-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5e5bc97f788faebc7d8ce56ee2aa3b79
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d7202be1b58b6d8459c84601c977fc50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_21d9799f87afc7be7126d137ebe58a16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_121e52465137de68399dd8b6d1ff41d2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_08e73c0c15d828110b586c741e0009c9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3df75628fa84ea5917c338d2143ccf81 |
| publicationDate |
2006-11-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2006324512-A |
| titleOfInvention |
Nitride semiconductor thin film and manufacturing method thereof |
| abstract |
PROBLEM TO BE SOLVED: To obtain a nitride semiconductor thin film satisfying a sufficiently low dislocation density, homogeneity over a wide area, simple manufacturing process and economical efficiency and having a high resistance near the substrate interface. SOLUTION: A first nitride semiconductor 22 containing boron formed on a substrate 21 and a boron composition ratio formed on the first nitride semiconductor 22 and having a boron composition ratio of boron in the first nitride semiconductor 22 are formed. The second nitride semiconductor 23 is smaller than the composition ratio. The boron composition of the first nitride semiconductor 22 is preferably 0.001 or more and 0.2 or less. The first nitride semiconductor 22 is preferably formed as a plurality of island-like crystals on the substrate 21 and has an average height of 0.1 microns or more. [Selection] Figure 2 |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113206174-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2009260296-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-WO2019044173-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9343615-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2015501526-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-7123322-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2011108552-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9045821-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113206174-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9647174-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-2543507-A4
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2019044173-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011201301-A |
| priorityDate |
2005-05-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |