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publicationDate 2006-11-24-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2006319288-A
titleOfInvention Semiconductor device
abstract 【Task】 High-power semiconductor devices used in the transmission stage of various communication systems such as mobile phone base stations, mobile phone terminals, cable TV repeaters, etc., are composed of environment-friendly lead-free materials, and generate heat and ambient due to semiconductor device operation Provided is a semiconductor device used under a high temperature environment of 150 ° C. or higher depending on the environment. [Solution] The semiconductor device of the present invention is SnPi plating in which Ni (nickel) plating (4) is applied to the base as 0.8 μm or more and Bi (bismuth) is contained in the surface layer in an amount of more than 1% as exterior plating of the lead frame (1). (5) is provided. [Selection] Figure 1
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