| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c16d2144a81bfa32a665dca1e93c3d37 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-146 |
| filingDate |
2006-04-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6c76f9bab8ce67199c2742264b072752 |
| publicationDate |
2006-11-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2006310835-A |
| titleOfInvention |
CMOS image sensor and manufacturing method thereof |
| abstract |
An image sensor for reducing dark current and a method for manufacturing the same are provided. A CMOS image sensor includes an active unit pixel including an indium doping layer located under a transmission gate for transferring charge between a light receiving element and a floating diffusion region. [Selection] Figure 4 |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2010199154-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-109298804-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2013138218-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2010206540-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-109298804-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2008112489-A1 |
| priorityDate |
2005-04-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |