http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2006308367-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0950e9df7f0e1b73efee1bda859951ad |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-66 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-26 |
| filingDate | 2005-04-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7fb2e55da27b235254850afe80e06cc4 |
| publicationDate | 2006-11-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2006308367-A |
| titleOfInvention | Semiconductor device evaluation method |
| abstract | A physical parameter of a semiconductor device can be extracted accurately and quickly. Capacitance-voltage characteristics of an MIS field effect transistor are measured, and based on the measurement result, a defect charge surface density present in the gate insulating film and at the interface of the gate insulating film and a fixed ion volume density in the gate electrode are determined. The physical quantity corresponding to the gate electrode surface capacity and the substrate surface capacity is calculated using the physical model for the set of defect charge surface density and fixed ion volume density satisfying the limiting condition, and the capacitance − The physical quantity corresponding to the sum of the gate electrode surface capacity and the substrate surface capacity is calculated based on the measurement result of the voltage characteristics, and the sum and capacity of the physical quantity corresponding to the gate electrode surface capacity and the substrate surface capacity calculated using the physical model are calculated. -The evaluation function regarding the error between the gate electrode surface capacitance calculated based on the voltage characteristic measurement result and the physical quantity corresponding to the sum of the substrate surface capacitance is minimized. Determining a set of fixed ion volume density and the charge surface density. [Selection] Figure 1 |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-112015002612-B4 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-115877164-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2009239201-A |
| priorityDate | 2005-04-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID24261 http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID457707758 |
Total number of triples: 18.