| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_3675c4129371bd9fda5228efc4faf364
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5e5c121269689cbab9b3a4548b15caf3 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B23K101-40 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B23K26-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3213
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-321
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B23K26-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B23K26-36
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306 |
| filingDate |
2005-04-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6657225b12a01ed8085a547b2e5eccc1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7d99a159c96a0ea47bf90f603328c572
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d57bd34499749bbad82fa4fcc65deeb6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4eb362635935b41dc6b1d2a27cbdd324 |
| publicationDate |
2006-11-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2006303286-A |
| titleOfInvention |
Laser irradiation fine processing method and semiconductor wafer constituted using the method |
| abstract |
PROBLEM TO BE SOLVED: To remove copper and perform flattening without contact by irradiating a Cu residual film with a laser in a chemical solution (processing solution). In the present invention, a metal material is placed in a chemical solution, a passive film is formed on the surface of the metal in the chemical solution, and a laser beam is selectively irradiated on the metal film to thereby form the passive film on the laser. The material is removed by etching with a chemical solution only at the portion where the passive film is removed by ablation. As a result, the copper film formed on the semiconductor wafer can be selectively removed. A semiconductor wafer is immersed in a processing solution, and a focused laser beam is selectively irradiated to a portion where copper is to be removed, thereby selectively removing the copper film. [Selection] Figure 1 |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113510364-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7749907-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8043969-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-102728958-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113510364-A |
| priorityDate |
2005-04-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |