http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2006303010-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0950e9df7f0e1b73efee1bda859951ad |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-0387 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8242 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-108 |
| filingDate | 2005-04-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cede00aa6e7f422af56bd36bf52e082c http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6c7280b3b2769d37b1f8b67585f1bb5d |
| publicationDate | 2006-11-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2006303010-A |
| titleOfInvention | Semiconductor device and manufacturing method thereof |
| abstract | PROBLEM TO BE SOLVED: To suppress the adhesion of impurities to an area other than the outside at the lower part of a trench. A silica glass 26 is formed on the lower 4a side of the trench 4 and then a silicon nitride film 27 is formed on the upper 4b side of the trench 4 by radical nitriding. At this time, since it can be formed under a constant temperature condition of low temperature (200 ° C. or higher and lower than 600 ° C., for example, 400 ° C.), it is possible to suppress arsenic from adhering to the upper portion 4 b of the trench 4 from the silica glass 26. Thereafter, heat treatment is performed to diffuse arsenic from the silica glass 26 to form the plate diffusion layer 5. [Selection] Figure 8 |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20110051160-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101713336-B1 |
| priorityDate | 2005-04-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 23.