http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2006295214-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c186e9ae8cafab5df5c8d80cfa7b0fa1 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-331 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-737 |
| filingDate | 2006-07-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4c3b251f665e6da6f993d257d1087d5e |
| publicationDate | 2006-10-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2006295214-A |
| titleOfInvention | Bipolar transistor manufacturing method |
| abstract | Provided is a bipolar transistor manufacturing method capable of increasing the hole concentration of a carbon-added base layer after growing a semiconductor multilayer film including semiconductor films to be a collector layer, a base layer, an emitter layer, and an emitter contact layer. To do. A substrate 2 is placed on a susceptor S in an OMVPE apparatus, and a subcollector film 30, a collector film 50, and a base film 60 are epitaxially grown on the substrate 2. Carbon is added to the base film 60. Next, the substrate 2 is maintained at the temperature T, and the emitter film 70 and the emitter contact film 80 are grown. Next, the supply of the source gas is stopped and the substrate 2 is maintained at the temperature T A. Here, the relationship T <T A ≦ 600 ° C. holds. Thereby, the hydrogen atoms in the base film 60 are desorbed into the gas phase, and the activation rate of the carbon atoms in the film 60 is improved. [Selection] Figure 2 |
| priorityDate | 2006-07-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 35.