http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2006294770-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_294881271413951a95f284b588a68e66 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522 |
| filingDate | 2005-04-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d7abf3858aaf4cafeb1ccbb1a1814c71 |
| publicationDate | 2006-10-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2006294770-A |
| titleOfInvention | Semiconductor device manufacturing method and semiconductor device |
| abstract | The present invention improves the adhesion of a second insulating film laminated on a first insulating film by irradiating the periphery of the first insulating film with plasma, and prevents peeling when the second insulating film is polished. It is possible to do. In a semiconductor device having a multilayer wiring structure on a substrate, an insulating film that electrically insulates between the wirings of the multilayer wiring structure is a laminate of a first insulating film and a second insulating film. A plasma irradiation region 31 is formed on the first insulating film 21 between the first insulating film 21 and the second insulating film 22 on the periphery of the substrate 11. [Selection] Figure 1 |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008218902-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8486836-B2 |
| priorityDate | 2005-04-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 18.