http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2006294758-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0950e9df7f0e1b73efee1bda859951ad |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8242 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-108 |
| filingDate | 2005-04-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cede00aa6e7f422af56bd36bf52e082c http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6c7280b3b2769d37b1f8b67585f1bb5d |
| publicationDate | 2006-10-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2006294758-A |
| titleOfInvention | Semiconductor device having trench capacitor and method of manufacturing the same |
| abstract | PROBLEM TO BE SOLVED: To provide a structure capable of improving a withstand voltage between capacitors and suppressing a leakage current in a trench capacitor part used in a withstand voltage DRAM cell, and a manufacturing method thereof. A plate electrode formed on the surface of a semiconductor substrate in a trench portion formed in a semiconductor substrate, a capacitor insulating film and an upper electrode formed in the trench portion, and a pad formed on the semiconductor substrate adjacent to the trench portion. In the trench capacitor portion including the silicon oxide film, the side wall portion of the pad silicon oxide film is covered with a nitride film, thereby improving the breakdown voltage between the capacitors and suppressing the leakage current. [Selection] Figure 10 |
| priorityDate | 2005-04-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 21.