| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_03d0f52bb4069f8a19d70dcfb697c67a |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-2206
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S2304-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-3211
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-02251
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-3063
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-2214
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-3054
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-3213 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y20-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-2231
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-34326 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-343 |
| filingDate |
2005-03-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_04a8ca4cabff3718ce354d74badb6907 |
| publicationDate |
2006-10-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2006286870-A |
| titleOfInvention |
Semiconductor laser and optical communication system using the same |
| abstract |
PROBLEM TO BE SOLVED: To obtain a good static characteristic in an InAlGaP semiconductor laser and to achieve a long life. SOLUTION: At least a first conductivity type InAlGaP cladding layer 3, an InAlGaP lower light guide layer 4, a quantum well active layer 5 made of InGaP or InAlGaP, an InAlGaP upper light guide layer 6, and an upper portion thereof on a first conductivity type GaAs substrate 1 Second conductivity type InAlGaP upper first cladding layers 7 and 8 including a non-doped region 7 formed on the light guide layer 6 side, a second conductivity type InGaP heterobuffer layer 11, and a second conductivity type GaAs cap layer 12 are sequentially laminated. In the red semiconductor laser, the second conductivity type carrier concentration at the interface between the upper first cladding layers 7 and 8 and the upper light guide layer 6 is set to a value of 4 × 10 16 cm −3 or less. [Selection] Figure 1 |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-7114292-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101449794-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2019169584-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2017005102-A |
| priorityDate |
2005-03-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |