| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_be055db3c1a09879df07379ba969e223
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2f4bf208df536855536344a9d4149b98 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-045
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-221
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-40114
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-225
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y10-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66825
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y30-00 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-792
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B82B3-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-788
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8247
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-115 |
| filingDate |
2005-03-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6a0acc74dd3518a4bae6956e9e83ea77
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2c67fba493724937c7838797cf9bac13
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ee4badb6c6d6e53f2e2e7aa49c18f8d8 |
| publicationDate |
2006-10-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2006269660-A |
| titleOfInvention |
Semiconductor device and manufacturing method thereof |
| abstract |
A semiconductor device in which oxidation of fine particles functioning as a quantum dot body is more reliably suppressed and a method for manufacturing the same are provided. A semiconductor device includes a semiconductor substrate, a tunnel insulating film provided on the semiconductor substrate, and an oxide semiconductor that is disposed on the tunnel insulating film and spaced apart from each other so as not to increase an oxidation number. become fine particles 4 is provided on the tunnel insulating film 3, a dielectric film 5 made of SiO 2 to embed the particles 4, and a control gate 6 which is provided on the insulating film 5. Since the fine particles 4 functioning as quantum dots are not oxidized during the manufacturing process or after manufacturing to become an insulator, the semiconductor device is manufactured with a high yield and the reliability is improved. [Selection] Figure 1 |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008270763-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012169609-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101903788-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8456908-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8295093-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20120087849-A |
| priorityDate |
2005-03-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |