http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2006261386-A

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assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_be055db3c1a09879df07379ba969e223
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-80
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-161
filingDate 2005-03-17-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_29d8f68aac544c9856751c451f06cb69
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a9a8441b3742091a6533e0b909a75625
publicationDate 2006-09-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2006261386-A
titleOfInvention Electromagnetic wave generating element
abstract The intensity of plasma waves is low. The semiconductor nanowire includes a semiconductor substrate, a semiconductor nanowire including a plurality of high-Eg regions and a low-Eg region, an insulating film, a gate electrode, a drain electrode, and a source electrode. By arranging the high-Eg region at half the wavelength period of the plasma wave to be excited, the intensity of the plasma wave is multiplied by the number of the high-Eg region and the number of gate electrodes. [Selection] Figure 1
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2009123332-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2009100458-A3
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-WO2016203341-A1
priorityDate 2005-03-17-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 19.