| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c5520dd38cc403678d9f91e0b0ee95fb |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-115
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C16-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C16-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-792
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-788
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8247 |
| filingDate |
2005-12-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_20f2a4e48dba5fc4483a043089c75de3 |
| publicationDate |
2006-09-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2006253650-A |
| titleOfInvention |
Nonvolatile semiconductor memory device |
| abstract |
PROBLEM TO BE SOLVED: To provide a non-volatile semiconductor memory device capable of hot electron writing and hot hole erasing by band-to-band tunneling and suitable for low voltage operation and large capacity. SOLUTION: A first memory transistor unit 15 and a second memory transistor unit 16 each including a memory function body 18 and a control gate 19 and an auxiliary transistor unit 17 including a gate insulating film 20 and an auxiliary gate 21 are formed into two diffusion regions 13. A memory cell unit group 30 having a NAND type structure in which a plurality of memory cell units 10 having a split gate structure in between are connected in series, and the memory cell unit group 30 has one diffusion between adjacent memory cell units 10. The region 13 is shared, and the shared diffusion region 13 is not provided with a contact. Further, the same voltage can be applied to the control gates 19 of the first and second memory transistor units 15 and 16 in units of the memory cell unit 10. [Selection] Figure 3 |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9030877-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-5434594-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-104241284-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2009022741-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8320191-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007134670-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-105405463-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-107204203-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-107204203-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-104241284-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-105469823-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-105469823-A |
| priorityDate |
2005-02-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |