| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e5db580deca7130dbe51805c6c608b35 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-0227
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76807
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-325
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3148
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76834
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76835
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02167
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76867
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76849 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-314
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-52
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522 |
| filingDate |
2005-03-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7724e2a6076727d924cdafb80784f8cc
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8a8b9a5c3c040d682c8ec5d6a6adcab7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a6ef43a2c81b13d9449d9b9edd0b2282
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4e592f247c2939b1bff0394f182e2694
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e7a39e189c0db70ada09716c2b7bd710 |
| publicationDate |
2006-09-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2006253290-A |
| titleOfInvention |
Method for forming SiC-based film and method for manufacturing semiconductor device |
| abstract |
A method of forming a SiC-based film capable of forming a low dielectric constant SiC film having excellent characteristics as a barrier film for preventing diffusion of a metal in a wiring layer into an interlayer insulating film, and the like Provided is a method for manufacturing a semiconductor device using an SiC film formed by a film forming method as a barrier film. A step of generating NH 3 plasma on the surface of a substrate 20 in the chamber and performing NH 3 plasma treatment on the substrate 20, a step of removing a reaction product containing nitrogen remaining in the chamber, and a chamber The process includes forming a SiC film 34 on the substrate 20 by PECVD. [Selection] Figure 2 |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8598706-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008205458-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011511469-A |
| priorityDate |
2005-03-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |