| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0950e9df7f0e1b73efee1bda859951ad |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1095 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7802
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0634
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66712 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 |
| filingDate |
2005-03-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1d1df4c013f6a50d6d7a42d006040f89
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f199cc14489661f0e4fca0ae29751317
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5f08a50990414997110bdbfa201c5321 |
| publicationDate |
2006-09-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2006245082-A |
| titleOfInvention |
Semiconductor device |
| abstract |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of improving charge balance. A semiconductor device (1) is a vertical power MOSFET having a super junction structure in which n-type first semiconductor regions (9) and p-type second semiconductor regions (11) are alternately arranged. The width of the trench 13 is increased as the distance from the bottom surface 17 increases. A p-type second semiconductor region 11 that is an epitaxial layer is formed in the trench 13. The second semiconductor region 11 includes an outer portion 19 having a high impurity concentration and an inner portion 21 having a low impurity concentration. [Selection] Figure 1 |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10217813-B2
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2017107950-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-4696986-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20160140244-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9087893-B2 |
| priorityDate |
2005-03-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |