| abstract |
A semiconductor device having an TFT capable of threshold control and an inverter circuit are provided. A semiconductor device according to the present invention includes a back gate electrode, a semiconductor active layer provided in contact with the back gate electrode through a first gate insulating film, and a second active layer provided on the semiconductor active layer. A plurality of TFTs having a gate electrode provided in contact with each other through the gate insulating film, and a threshold control circuit for controlling a threshold value of the plurality of TFTs, and the back gate electrode Is characterized in that an arbitrary voltage is applied by the threshold control circuit. [Selection] Figure 1 |