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filingDate 2005-02-14-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2006-08-24-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2006222402-A
titleOfInvention Gallium nitride compound semiconductor and manufacturing method
abstract PROBLEM TO BE SOLVED: To propose a gallium nitride compound semiconductor having a large diameter and capable of diverting a conventional silicon process and a manufacturing method. A gallium nitride compound having excellent characteristics as a semiconductor material is formed on a relatively inexpensive Si substrate. By forming on the Si substrate, it is possible to utilize the conventional silicon process. [Selection] Figure 1
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012151401-A
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Total number of triples: 33.