| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce787970b69aeb08d159e7c101c9ed7 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/A47G2400-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/A47G2021-002
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/A47G2400-12 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-54
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/A47G21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-80
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/A47G21-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23F4-00 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F1-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23F4-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 |
| filingDate |
2006-01-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1863b509999ffdc004f17193b8f6a98f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_adccbf38a816cfaa1c69016d06765002
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5d2cc03259fd0ef1cbe1501931911114
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d73fddeb26fc0eb13bbd594190fec5ec
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_518e2ce12875ba41bad3308c86c1a2a6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ef6cbb71261e25d1d02435b2b3138bb2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d5e9102a099ce79ed6ad0077b47a6456 |
| publicationDate |
2006-08-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2006215552-A |
| titleOfInvention |
Method for plasma etching a chromium layer suitable for photomask fabrication |
| abstract |
An improved method of plasma etching of a chromium layer in photomask fabrication is provided. A processing method deposits a protective layer on a resist layer, optionally on a resist layer, on a partially exposed chromium layer by patterning a resist layer disposed on the chromium layer (204). ). Next, the patterned chrome layer may be etched by biasing the substrate with a plurality of power pulses of less than 600 watts while providing at least one halogen-containing process gas to the processing chamber. it can. [Selection] Figure 2 |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008113007-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008116949-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2018037668-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2006209128-A |
| priorityDate |
2005-01-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |