http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2006210934-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d78fe473c8a29219129bbc8bb50f6a59 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-24 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-265 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 |
| filingDate | 2006-02-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fda5ead47a43e9d9359158d284b0aace http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_63a75c9af0dfab97528403f1d1eec772 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1d6912ae3292d7b76e424075af584500 |
| publicationDate | 2006-08-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2006210934-A |
| titleOfInvention | Manufacturing method of silicon epitaxial wafer |
| abstract | PROBLEM TO BE SOLVED: To provide a method for manufacturing a silicon epitaxial wafer capable of extremely efficiently manufacturing an epitaxial wafer in which a plurality of epitaxial layers are laminated via an embedded ion implantation layer and with less lateral diffusion of the formed ion implantation layer. To do. By performing heat treatment for crystal recovery after ion implantation in a hydrogen atmosphere, the occurrence of surface roughness on ion implanted layers 71 and 72 can be extremely effectively suppressed without performing pre-implantation oxidation treatment. The As a result, in the manufacturing method of the epitaxial wafer having the buried ion-implanted layers 71 ′ and 72 ′, it is possible to omit the pre-implantation oxidation process, and hence ion implantation using only the photoresist film as the mask 64. As a result of eliminating the active oxide film forming process on the epitaxial layer 3 including the pre-implantation oxidation, the number of thermal histories applied to the buried ion implantation layers 71 ′ and 72 ′ is reduced, and the lateral diffusion is effectively performed. It is suppressed. Further, since the formation / removal of the oxide film is not required, the number of epitaxial wafer manufacturing steps can be drastically reduced. [Selection] Figure 2 |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102098296-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9111759-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2013058644-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20140123825-A |
| priorityDate | 2006-02-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 38.