| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_89afae566b725ae78e20cf972d9bcdc7 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0397
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0382
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-38
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-322 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-039
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 |
| filingDate |
2005-01-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bea788b3a7c9526a431de5b6b05087bf
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e1b71d0b212b8a18ab126f3c3f2034a5 |
| publicationDate |
2006-08-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2006208546-A |
| titleOfInvention |
Resist pattern forming method |
| abstract |
PROBLEM TO BE SOLVED: To provide a resist pattern forming method capable of easily suppressing pattern collapse when forming a fine pattern. A resist film is formed on a substrate using a resist composition containing a resin component (A) whose alkali solubility is changed by the action of an acid and an acid generator component (B) that generates an acid upon exposure. A step of selectively exposing the resist film, and a step of developing the resist film with an alkali developer for a development time of less than 30 seconds to form a resist pattern. A resist pattern forming method. [Selection figure] None |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2010013627-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2011014011-A3
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2011014011-A2 |
| priorityDate |
2005-01-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |