http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2006202935-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5547f741b25666fc4ae5195cf71a979b |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-343 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-308 |
| filingDate | 2005-01-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fc84374ebc04649e3c71816f066626c6 |
| publicationDate | 2006-08-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2006202935-A |
| titleOfInvention | Semiconductor laser and manufacturing method thereof |
| abstract | 【Task】 A semiconductor laser having both high coherence and short-wavelength oscillation is provided by a simpler method with a higher yield. [Solution] An active layer 15 composed of a group III nitride semiconductor, a resonator that induces laser oscillation by reflecting light from the active layer 15 with a pair of mirrors, and a group III nitride grown at a low temperature of 600 ° C. or lower A group III nitride semiconductor laser comprising a diffraction grating 24 made of an oxide semiconductor and selecting the wavelength of light from the active layer 15. A semiconductor laser having both high coherence and short-wavelength oscillation can be manufactured with a high yield and an easier method. [Selection] Figure 1 |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-WO2019146321-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2019146321-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008166394-A |
| priorityDate | 2005-01-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 25.