http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2006196795-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c5520dd38cc403678d9f91e0b0ee95fb |
| classificationIPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-1368 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| filingDate | 2005-01-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1a6ccdb1c51f0fbe55a4c325eab92e87 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c7d2275cda77d0331413283a8b0616aa |
| publicationDate | 2006-07-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2006196795-A |
| titleOfInvention | Crystalline thin film manufacturing method, crystalline thin film, semiconductor thin film, semiconductor device, and display device |
| abstract | PROBLEM TO BE SOLVED: To obtain a crystalline film having excellent characteristics. When producing a thin film to be crystallized, an impurity element that changes the thermal conductivity of the film in a desired pattern is previously introduced into the underlying insulating film. As crystallization occurs in the thin film, a temperature distribution is formed in the thin film. When the energy beam is irradiated, the base insulating film starts to solidify first from the region where the heat conduction is high, and the region where the heat conduction is low is finally solidified. As a result, the ridge position can be positively controlled, and a crystalline thin film having a smooth surface in a desired region can be obtained. [Selection] Figure 1 |
| priorityDate | 2005-01-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 26.