http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2006191005-A

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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-10
filingDate 2005-12-07-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_88fa48abd461f627af5f18464a4024d1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_12d973f7e95feb643852caed62ade1ba
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publicationDate 2006-07-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2006191005-A
titleOfInvention Memory device and manufacturing method thereof, semiconductor device and manufacturing method thereof
abstract An object of the present invention is to provide a memory device and a semiconductor device that are non-volatile, easy to manufacture, and additionally writable. A memory element having a simple structure in which a composition layer is sandwiched between a pair of conductive layers is provided. With the above characteristics, a memory device that is non-volatile, easy to manufacture, and additionally writable can be provided. Further, the memory device includes a plurality of memory cells, a plurality of bit lines extending in a first direction, and a plurality of word lines extending in a second direction perpendicular to the first direction. Each of the plurality of memory cells has a memory element. The memory element includes a first conductive layer that forms a bit line, a second conductive layer that forms a word line, and a composition layer that is cured by optical action. The composition layer is provided between the first conductive layer and the second conductive layer. [Selection] Figure 1
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012205054-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008182217-A
priorityDate 2004-12-07-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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