| abstract |
An object of the present invention is to prevent film formation accuracy from being lowered due to a change in plasma density or the like. A process tube having a process chamber for batch processing a plurality of wafers, a gas supply pipe for supplying a dichlorosilane gas to the process chamber, and an ammonia gas for supplying the process chamber. A gas supply pipe 50, an exhaust pipe 35 that exhausts the processing chamber 32, a pair of discharge electrodes 57 and 57 that excites plasma in the processing chamber 32, and an outlet that blows active species 72 excited by the plasma into the processing chamber 32. In the ALD apparatus provided with a plasma chamber 48 having 49, a pair of probes 65, 65 for detecting the plasma state are arranged in the processing chamber 32, and the plasma state in the processing chamber 32 is based on the probe current of the probe. Is connected to the controller 60. Since changes in the plasma state in the processing chamber can be constantly monitored, it is possible to take measures to prevent a decrease in the accuracy of the silicon nitride film. [Selection] Figure 6 |