http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2006186349-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-092 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8238 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-265 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 |
| filingDate | 2005-12-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7dec4d1ff9bbf4d655bc09a747cbae06 |
| publicationDate | 2006-07-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2006186349-A |
| titleOfInvention | Semiconductor device and manufacturing method thereof |
| abstract | A semiconductor device excellent in reduction of leakage current due to a short channel effect and a manufacturing method thereof are provided. In the process of forming a field effect transistor formed on a single crystal semiconductor substrate, impurities are introduced to form an extension region, and the single crystal lattice is broken to be amorphous. Alternatively, by introducing impurities and an element having a large atomic weight, the single crystal lattice is broken to be amorphous. Then, by irradiating a laser beam having a pulse width of 1 fs or more and 10 ps or less and a wavelength of 370 nm or more and 640 nm or less, only the amorphized portion is selectively activated, and the extension region is formed with a thickness of 20 nm or less. . [Selection] Figure 1 |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8193064-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9296068-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8395084-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9786501-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2015204351-A |
| priorityDate | 2004-12-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 79.