| abstract |
PROBLEM TO BE SOLVED: To provide a memory element having good magnetic properties and heat resistance. A storage layer 17 that holds information according to the magnetization state of a magnetic material is provided. A magnetization fixed layer 31 is provided on the storage layer 17 via an insulating layer 16 serving as a tunnel barrier. However, the memory element 3 in contact with the base layer or the upper protective layer 19 is formed through the oxide layer 18. [Selection] Figure 2 |