| abstract |
It is used in immersion lithography without being dissolved in water, and prevents multiple interference of light in the photoresist film in the formation of the photoresist pattern. A polymer for an upper antireflection film capable of suppressing fluctuations and a method for producing the same are provided. Moreover, the composition for upper antireflection films containing the polymer for upper antireflection films, and the pattern formation method using the same are provided. A polymer for an upper antireflection film, which is represented by the following chemical formula 1 and has a weight average molecular weight of 1,000 to 1,000,000, is constituted. [In the above formula, R 1 and R 2 are each hydrogen, fluorine, methyl or methyl fluoride, and R 3 is a hydrocarbon having 1 to 10 carbon atoms, or a part of hydrogen is substituted with fluorine. It is a hydrocarbon having 1 to 10 carbon atoms. a, b, and c indicate 0.05 to 0.9 as the molar fraction of each monomer, respectively. ] [Selection figure] None |