| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c16d2144a81bfa32a665dca1e93c3d37 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R1-0466
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R1-045
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R31-2863 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R1-0483
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R1-067 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R1-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01R43-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-26
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01R11-01 |
| filingDate |
2005-12-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c1d057b50b2801f24743d32e11c89e94
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d0e25c011e7045b0812bd828ee4bb868
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3175372fa034e66892d6e14b781b4b86
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4ea4aef94be099f61375173b9d4ac79a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_00812f881b6e22e03fa672019e9111e2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_29b6e2939f28379e130dfa43c5155b3e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f946a2b466a3a0609eb97adda9e89d2a |
| publicationDate |
2006-06-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2006162617-A |
| titleOfInvention |
Semiconductor package test connector |
| abstract |
A semiconductor package test connector that protects a low-density conductive silicon portion having good bonding reliability and firm mechanical and electrical contact while utilizing a conventional silicon connector manufacturing process. A semiconductor package test silicon connector includes a connector body made of a mixture of insulating silicon powder containing a predetermined concentration of conductive powder, and a conductive silicon portion. The conductive silicon part 130 is close to the upper surface 123 of the connector body 120 and protrudes from the upper surface 123 of the connector body 120, and the high-density conductive silicon part 132. The low density is formed in a vertical form at the bottom of the connector body, the lower surface 131 is exposed from the lower surface 121 of the connector body 120, and the conductive powder is collected at the position of the connector body 120 corresponding to the solder balls of the semiconductor package. And a conductive silicon portion 134. [Selection] Figure 5 |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2015501427-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9488675-B2 |
| priorityDate |
2004-12-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |