| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_dca153f19868f747eeea612b047a9e7c |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-268 |
| filingDate |
2004-11-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ca7c054d88b728024d443ebe073a2815 |
| publicationDate |
2006-06-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2006156676-A |
| titleOfInvention |
Laser annealing method |
| abstract |
PROBLEM TO BE SOLVED: To provide a laser annealing method capable of obtaining large silicon crystal grains without previously forming a polycrystalline silicon film on the entire surface of a substrate having an amorphous silicon film formed on the surface. A laser annealing method includes (a) a step of irradiating a substrate having an amorphous silicon film on a surface with pulsed laser light to form silicon crystal grains, and (b) the step (a The silicon crystal grains using the silicon crystal grains as seed crystals on the amorphous silicon film by scanning the continuous wave laser beam in the first direction starting from the region in contact with the silicon crystal grains formed in Growing in the first direction. [Selection] Figure 1 |
| isCitedBy |
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2020129600-A1 |
| priorityDate |
2004-11-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |