| abstract |
PROBLEM TO BE SOLVED: To provide a power semiconductor device in which a temperature rise due to heat concentration is reduced. An aspect ratio of a power semiconductor element is set to 1.5 or more. As a result, it is possible to increase the heat dissipation to the surroundings and operate even a power semiconductor element having a high current density in an efficient temperature region. Further, the number of wires 61 to 87 for extracting the main current from the source electrode 2 is set to 14 or more, and the directions are dispersed in two different directions. The ends of the wires dispersed in the two directions are connected to the same wiring electrode 42. [Selection] Figure 5 |