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publicationDate 2006-06-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2006152301-A
titleOfInvention Polymer film for hard mask made of tetrahedral carbon compound, method for producing the same, and method for forming fine pattern using the same
abstract PROBLEM TO BE SOLVED: To provide a polymer film for a hard mask having a new structure that can be used as a hard mask capable of effectively performing interlayer alignment by ensuring resistance to dry etching and reducing absorbance at a long wavelength. A polymer according to the sp 3 carbon main skeleton, CH n X 3 (4- n) reductive coupling reaction or CH n X 3 (4-n ) and a reducing cup R 1 X 4, Obtained by a ring reaction. The polymer film for the hard mask is obtained by curing at a temperature of 200 to 300 ° C. after forming the polymer film. R 1 is an aliphatic, alicyclic or aromatic group having the general formula of C n ′ H (2n ′ + 1) or C 6 H m R 2 (5-m) , and R 2 is a halogen atom , Hydroxy, nitrile, or carboxyl group, and X 3 and X 4 are F, Cl, Br, or I, respectively. [Selection] Figure 4A
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