Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c186e9ae8cafab5df5c8d80cfa7b0fa1 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B25-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-16 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-38 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-01 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-32 |
filingDate |
2006-02-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_584e28b75313e8a52525bfaadac2fe23 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_06bdc247272bf8871948fa94720009f4 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_059871249fb9c02c631b4ad60ce3ecce |
publicationDate |
2006-06-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
JP-2006151805-A |
titleOfInvention |
GaN single crystal substrate, method for manufacturing GaN single crystal substrate, light emitting device manufactured on GaN single crystal substrate, and method for manufacturing the same |
abstract |
PROBLEM TO BE SOLVED: To provide a GaN single crystal substrate which has a large area and can be self-supported with little warpage. A mask having a staggered window or a stripe window is formed on a GaAs (111) substrate, a GaN buffer layer is formed at a low temperature by an HVPE method or an MOC method, and a GaN epitaxial layer is thickened at a high temperature by an HVPE method. Form and remove the GaAs substrate. Using a GaN free-standing film as a seed crystal, GaN is thickened by the HVPE method to make a GaN ingot. This is cut by a slicer and polished to produce a transparent and colorless GaN wafer with little warpage. [Selection] Figure 7 |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2010042958-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011168490-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008303086-A |
priorityDate |
2006-02-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |