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filingDate 2006-02-07-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_584e28b75313e8a52525bfaadac2fe23
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publicationDate 2006-06-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2006151805-A
titleOfInvention GaN single crystal substrate, method for manufacturing GaN single crystal substrate, light emitting device manufactured on GaN single crystal substrate, and method for manufacturing the same
abstract PROBLEM TO BE SOLVED: To provide a GaN single crystal substrate which has a large area and can be self-supported with little warpage. A mask having a staggered window or a stripe window is formed on a GaAs (111) substrate, a GaN buffer layer is formed at a low temperature by an HVPE method or an MOC method, and a GaN epitaxial layer is thickened at a high temperature by an HVPE method. Form and remove the GaAs substrate. Using a GaN free-standing film as a seed crystal, GaN is thickened by the HVPE method to make a GaN ingot. This is cut by a slicer and polished to produce a transparent and colorless GaN wafer with little warpage. [Selection] Figure 7
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2010042958-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011168490-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008303086-A
priorityDate 2006-02-07-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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