patent/JP-2006148063-A

http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2006148063-A

Outgoing Links

Predicate	Object
assignee	http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36d1d9c59848bff6ad5f55923d1290f5
classificationCPCAdditional	http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C2213-81 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-615 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2221-1094 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-221
classificationCPCInventive	http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76876 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76865 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76847 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76868 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76846 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76844 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C13-025 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53276 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76877 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76879 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2885 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y10-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76843 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B61-22
classificationIPCInventive	http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-105 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L43-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8246 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-52
filingDate	2005-08-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor	http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d4efec1092550a0c33548da47506428c
publicationDate	2006-06-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber	JP-2006148063-A
titleOfInvention	Wiring structure, semiconductor device, MRAM, and manufacturing method of semiconductor device
abstract	Provided is a wiring structure or the like that can suppress a decrease in the amount of current flowing therethrough (a current having a high current density can flow) even if the wiring size is reduced. A wiring structure according to the present invention is disposed in an insulating film formed on a base. Here, a groove 2 is formed in the surface of the insulating film 1. A large number of carbon nanotubes 4 are included in the groove 2. That is, the wiring structure according to the present invention includes at least a large number of carbon nanotubes 4. [Selection] Figure 1
isCitedBy	http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8533945-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008192706-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2009027157-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101110804-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2012059967-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2015050305-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012080006-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-1976351-A2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008251701-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100809602-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8358008-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8716688-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100979162-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8492076-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011023420-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2016035623-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2010010661-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8700889-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101293782-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008258184-A
priorityDate	2004-10-22-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type	http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate	Subject
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Total number of triples: 57.