http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2006147899-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_73ebc284a55d5daf0e209d6186c9e65c |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-02 |
| filingDate | 2004-11-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f04865927853ea1cf2982301e2d40f29 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6511319f3fb2d6935bc344e92e096e5c http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1db44919bd4806c460ec208b6093f90b |
| publicationDate | 2006-06-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2006147899-A |
| titleOfInvention | Manufacturing method of semiconductor device |
| abstract | A novel semiconductor device manufacturing method and manufacturing apparatus that do not use plasma as a means for removing a high resistance layer at the bottom of a via before a barrier metal film is formed on a low dielectric constant insulating film having holes. . In a manufacturing method of a semiconductor device including a metal film wiring 103 using a low dielectric constant film 102 having a relative dielectric constant of less than 3 as an interlayer film, the interlayer insulating film is formed between the metal film wiring and the interlayer film. Before the barrier metal 105 is formed, thermal reduction treatment is performed with a reducing gas such as NH3 gas whose temperature is adjusted to 100 ° C. to 400 ° C. or a mixed gas containing a reducing gas. [Selection] Figure 1 |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-106531688-A |
| priorityDate | 2004-11-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 32.