| abstract |
PROBLEM TO BE SOLVED: To improve the surface of a resist pattern to a contact angle of 70 degrees or more when forming a resist pattern by lithography technology, and to prevent the pattern collapse quickly and effectively, and to produce a high quality product A clean rinse solution. A rinsing liquid for lithography comprising a solution containing (A) a water-soluble fluorine-containing compound and (B) an organosilane compound. [Selection figure] None |