http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2006140533-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36d1d9c59848bff6ad5f55923d1290f5 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-48091 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-45144 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-4826 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-32245 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-73215 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-92147 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-83191 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-31 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-29 |
| filingDate | 2006-02-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_64bc3e620fbc1efd21b389cd20e83494 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1d362238acc8a6943ab6896741138193 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_82821e8c629e203aa63455aac089f902 |
| publicationDate | 2006-06-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2006140533-A |
| titleOfInvention | Resin-sealed semiconductor device |
| abstract | An object of the present invention is to prevent deterioration of ferroelectric characteristics and improve solder reflow resistance of a resin-encapsulated semiconductor device using a ferroelectric thin film. A surface protection film of a semiconductor element is formed by heating and curing a polyimide precursor composition film at 230 ° C. to 300 ° C. The surface protective film is made of polyimide having a glass transition temperature of 240 ° C. to 400 ° C. and a Young's modulus of 2600 MPa to 6 GPa. Moreover, even if the heat curing temperature of the polyimide precursor composition is higher than 300 ° C., it is a heat treatment for a short time of 350 ° C. or less (normally within 4 minutes, depending on the heat resistance of the semiconductor element used), and If the Young's modulus of the formed polyimide film is 3500 MPa or more and the glass transition temperature is 260 ° C. or more, the problem of the present invention can be solved without deteriorating the polarization characteristics of the ferroelectric film. [Selection] Figure 3 |
| priorityDate | 1997-01-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 96.