http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2006128355-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1af8df51ce24ca931ae718fb747f6aa0 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76898 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-52 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205 |
| filingDate | 2004-10-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9dd0c963c213be90566874b011f27edb |
| publicationDate | 2006-05-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2006128355-A |
| titleOfInvention | Silicon semiconductor substrate |
| abstract | Provided is a silicon semiconductor substrate capable of ensuring electrical insulation even when a conductive film is formed on the inner surface of an electrodeposited film and electrical connection is made on the front and back surfaces of the substrate. A metal film is formed at an edge portion of a through hole, and a silicon semiconductor substrate is formed by forming an electrodeposition film on the inner surface of the through hole including the edge portion. Here, the electrodeposition film is an insulating film formed in the through hole. Also, a conductive film is formed on the inner surface of the electrodeposition film formed in the through hole. Further, the inner diameter of the through hole is 50 μm to 150 μm. According to the present invention, an insulating film with good insulation can be formed by using an electrodeposition technique even on the inner surface of a very fine through-hole provided in a silicon semiconductor substrate. [Selection] Figure 1 |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2013072525-A3 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/FR-2982877-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10460945-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8178791-B2 |
| priorityDate | 2004-10-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 21.