http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2006108135-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c5520dd38cc403678d9f91e0b0ee95fb |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 |
| filingDate | 2004-09-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3520d8d854cb02ed81c3edcaf2fb0518 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8736b6f5a23737a401e79605f6423b37 |
| publicationDate | 2006-04-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2006108135-A |
| titleOfInvention | Crystalline semiconductor film manufacturing method and crystalline semiconductor film |
| abstract | PROBLEM TO BE SOLVED: To provide a method for producing a crystalline semiconductor film composed of crystal grains having the same crystal orientation, the crystal grains having an average grain size reduced to about 4 μm or less. A method for manufacturing a crystalline semiconductor film according to the present invention includes: (a) a step of forming an amorphous semiconductor film 104 on a substrate 101; and (b) promoting crystallization of the amorphous semiconductor film 104. And a step of crystallizing the amorphous semiconductor film 104 by heating in an atmosphere containing water vapor to obtain a crystalline semiconductor film 104b. [Selection] Figure 1 |
| priorityDate | 2004-09-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 25.