http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2006093713-A

Outgoing Links

Predicate Object
assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c16d2144a81bfa32a665dca1e93c3d37
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-105
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31691
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-84
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02356
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B53-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02197
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-105
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8246
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316
filingDate 2005-09-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2e4dff3ed2fa7db5819a664c8a9c2186
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_566a101d394926124074799865add614
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9750354031ebb4cdebb3d086e34cb65a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b63484dd4c734ec7c83008072aab915f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7e7ac0138d08f44292afaf0f569f5d8d
publicationDate 2006-04-06-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2006093713-A
titleOfInvention Method for forming ferroelectric film, capacitor using the same, and method for manufacturing semiconductor memory device
abstract PROBLEM TO BE SOLVED: To provide a method for forming a ferroelectric film, a capacitor using the same, and a method for manufacturing a semiconductor memory device. A step of preparing a substrate, a step of depositing an amorphous ferroelectric film on the substrate, and a step of irradiating the amorphous ferroelectric film with a laser beam to crystallize the amorphous ferroelectric film. A method for forming a ferroelectric film, comprising: a method for manufacturing a capacitor using the method for manufacturing a ferroelectric film; and a semiconductor memory using the method for manufacturing a capacitor. It is a manufacturing method of an element. Therefore, the ferroelectric film can be formed at a temperature lower than 500 ° C., and thermal damage to other members can be reduced when the ferroelectric film is formed. [Selection] Figure 5
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2012014775-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012028716-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008218753-A
priorityDate 2004-09-24-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate Subject
isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419523291
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID977
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419556970
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419544408
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID947

Total number of triples: 31.