abstract |
PROBLEM TO BE SOLVED: To provide a method for forming a ferroelectric film, a capacitor using the same, and a method for manufacturing a semiconductor memory device. A step of preparing a substrate, a step of depositing an amorphous ferroelectric film on the substrate, and a step of irradiating the amorphous ferroelectric film with a laser beam to crystallize the amorphous ferroelectric film. A method for forming a ferroelectric film, comprising: a method for manufacturing a capacitor using the method for manufacturing a ferroelectric film; and a semiconductor memory using the method for manufacturing a capacitor. It is a manufacturing method of an element. Therefore, the ferroelectric film can be formed at a temperature lower than 500 ° C., and thermal damage to other members can be reduced when the ferroelectric film is formed. [Selection] Figure 5 |