http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2006093597-A

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Predicate Object
assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d78fe473c8a29219129bbc8bb50f6a59
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-26
filingDate 2004-09-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_aa3bc5a19a49d165bb7b32451d19dd7f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0fd8a2db9af7249af8610874ba069b73
publicationDate 2006-04-06-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2006093597-A
titleOfInvention Semiconductor wafer evaluation method
abstract A semiconductor wafer evaluation method capable of specifying the position of a defect in a BOX film on an SOI wafer is provided. A semiconductor wafer evaluation method for evaluating an SOI wafer in which a buried insulating film (BOX film) 2 and an SOI layer 1 are laminated on a silicon substrate 3 by a pseudo MOSFET, wherein the surface of the SOI layer 1 is evaluated. The drain side electrode 6 is surrounded and separated, and a linear source side electrode 5 having a broken notch is disposed, and an ammeter 7 is connected to each of the source side electrode 5 and the drain side electrode 6, By applying a voltage to the gate side electrode 4 in contact with the back surface of the silicon substrate 3, the current value of the source side electrode 5 measured by the ammeter 7 and the current value of the drain side electrode 6 are compared. Thus, the leak location of the BOX film 2 is specified. [Selection] Figure 3
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2013138185-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2009016681-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012515447-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008016773-A
priorityDate 2004-09-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559541

Total number of triples: 21.