| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_a445ef6af90ff6406aa6a33c4bf44fa7 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-792
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-788
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8247
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-115 |
| filingDate |
2004-09-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c952005108447c8ce8907274cafdc739
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1c569a6327865dfd53f69bb3351c0f99
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_87a4dba522e5a4d765db5e4abd6db05b |
| publicationDate |
2006-03-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2006086206-A |
| titleOfInvention |
Non-volatile memory |
| abstract |
PROBLEM TO BE SOLVED: To charge a silicon dot that can increase the threshold voltage shift of a memory element before writing and after writing without increasing the density of the silicon dot and lengthen the charge holding time. Provided is a non-volatile memory device used for storage of the memory. A non-volatile memory device according to the present invention includes a tunnel oxide film formed on a fully depleted thin film SOI surface, a plurality of silicon dots formed at a predetermined density on the surface of the tunnel oxide film, and the silicon An oxide film formed on the tunnel oxide film and a gate electrode formed on the surface of the oxide film are provided across the dots. [Selection] Figure 7 |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7605422-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9941300-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008140910-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2009119527-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10090330-B2 |
| priorityDate |
2004-09-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |